2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
[A-1-4]Evaluation of change in drain current due to strain in 0.13-μm-node MOSFETs
Yukihiro Kumagai, Hiroyuki Ohta, Hideo Miura, Fumitoshi Ito, Keiichi Maekawa, Akihiro Shimizu(1.Mechanical Engineering Research Laboratory, Hitachi, Ltd., 2.Semiconductor & Integrated Circuits Div., Hitachi, Ltd., 3.Hitachi ULSI Systems, Co.)
