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Richard B. Dasher(1.Stanford University, US-Asia Technology Management Center <and> Center for Integrated Systems)
Hironobu Ono(1.Toyota Motor Corporation)
Peter Fromherz(1.Department of Membrane and Neurophysics Max Planck Institute for Biochemistry)
Shin-ich Takagi(1.MIRAI-Project, Association of Super-Advanced Electronics Technology (ASET) Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)
A. M. Waite, U. N. Straube, N. S. Lloyd, S. G. Croucher, Y. T. Tang, B. Rong, A. G. R. Evans, T. J. Grasby, M. Myronov, T. E. Whall, E. H. C. Parker, D. J. Norris, A. G. Cullis(1.University of Southampton, Dept. of Electronics and Computer Science, 2.University of Warwick, Dept of Physics, 3.University of Sheffield, Department of Electronic & Electrical Engineering)
Chun-Chieh Lin, Chao-Hsiung Wang, Chung-Hu Ge, Chien-Chao Huang, Tien-Chih Chang, Liang-Gi Yao, Shih-Chang Chen, Mong-Song Liang, Fu-Liang Yang, Yee-Chia Yeo, Chenming Hu(1.Taiwan Semiconductor Manufacturing Company, Ltd.)
Yukihiro Kumagai, Hiroyuki Ohta, Hideo Miura, Fumitoshi Ito, Keiichi Maekawa, Akihiro Shimizu(1.Mechanical Engineering Research Laboratory, Hitachi, Ltd., 2.Semiconductor & Integrated Circuits Div., Hitachi, Ltd., 3.Hitachi ULSI Systems, Co.)
Kenji Natori, Tomo Shimizu, Tsuyoshi Ikenobe(1.Institute of Applied Physics, University of Tsukuba)
A. Asenov(1.Device Modelling Group: Department of Electronics and Electrical Engineering University of Glasgow)
Seong-Dong Kim, Sungkwon Hong, Jae-Kwan Park, Jason C. S. Woo(1.Department of Electrical Engineering, University of California)
Juin J. Liou, Qiang Zhang, John McMacken, J. Ross Thomson, Kevin Stiles, Paul Layman(1.School of EE and CS, University of Central Florida, 2.Modeling and Simulation Group, Agere Systems)
Hideki Shima, Toshimasa Matsuoka, Kenji Taniguchi(1.Department of Electronics and Information Systems, Osaka University)
S. Jinbou, H. Ueno, H. Kawano, K. Morikawa, N. Nakayama, M. Miura-Mattausch, H. J. Mattausch(1.Graduate School of Advanced Sciences of Matter, Research Center for Nanodevices and Systems, Hiroshima University)
Robert M. Wallace(1.University of North Texas, Department of Materials Science)
H. Ota, N. Yasuda, T. Yasuda, Y. Morita, N. Miyata, K. Tominaga M. Kadoshima, S. Migita, T. Nabatame, A. Toriumi(1.MIRAI Project, Advanced Semiconductor Research Center (ASRC), AIST, 2.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), National Institute of Advanced Industrial Science and Technology (AIST), 3.Department of Materials Science, School of Engineering, University of Tokyo)
Yoshinao Harada, Masaaki Niwa, Dim-Lee Kwong(1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd., 2.Micro Electronics Research Center, The University of Texas at Austin)
Kazuhiko Yamamoto, Masayuki Asai, Shigenori Hayashi, Sadayoshi Horii, Masaaki Niwa, Hironobu Miya(1.ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd., 2.Semiconductor equipment system laboratory, Hitachi Kokusai Electric Inc.)
Tomoyuki Hamada, Takuya Maruizumi, Yuuichi Matsui, Masahiko Hiratani(1.Advanced Research Laboratory, Hitachi Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)
Reinhold H. Dauskardt(1.Department of Materials Science and Engineering Stanford University)
Kazuhiro Yamada, Yoshiaki Oku, Nobuhiro Hata, Shozo Takada, Takamaro Kikkawa(1.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 2.MIRAI Project, Advanced Semiconductor Research center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Research Center for Nanodevices and Systems, Hiroshima University)
Yoshiaki Oku, Kazuhiro Yamada, Norikazu Nishiyama, Shunsuke Tanaka, Korekazu Ueyama, Nobuhiro Hata, Takamaro Kikkawa(1.MIRAI Project, ASET, 2.Graduate School of Engineering Science, Osaka University, 3.MIRAI Project, ASRC, AIST, 4.RCNS, Hiroshima University)
Munehiro Tada, Takashi Ogura, Yoshihiro Hayashi(1.Silicon Systems Research Laboratories, NEC Corporation)
Zenglin Wang, Hiroyuki Sakaue, Shoso Shingubara, Talayuki Takahagi(1.Graduate School of Advanced Science of Matter, Hiroshima University)
Rudolf M. Tromp(1.IBM T.J. Watson Research Center)
Satoru FUJISAWA, Takamaro KIKKAWA, Tokushi KIZUKA(1.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 2.Research Center for Nanodevices and Systems, Hiroshima University, 3.Institute of Materials Science, University of Tsukuba)
Akio Toda, Kensuke Okonogi, Nobuyuki Ikarashi, Haruhiko Ono(1.Silicon Systems Research Laboratories, NEC Corporation, 2.Device Development Department, Device Development Division, Elpida Memory Inc.)
Masayuki Sohgawa, Hirofumi Kanda, Takeshi Kanashima, Akira Fujimoto, Masanori Okuyama(1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, 2.Dept. Electrical Engineering, Wakayama National College of Technology)
Takahide Umeda, Yasunori Mochizuki(1.Silicon Systems Research Lab., NEC Corporation)
T. Nishimura, D. Starodub, T. Gustafsson, E. Garfunkel(1.Departments of Chemistry and Physics, Rutgers University)
Heiji Watanabe(1.Silicon Systems Research Laboratories, NEC Corporation)
Masaru Kadoshima, Masayasu Nishizawa, Tetsuji Yasuda, Toshihide Nabatame, Akira Toriumi(1.MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), 2.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Department of Materials Science School of Engineering, University of Tokyo)
Toshihide Nabatame, Tetsuji Yasuda, Masayasu Nishizawa, Minoru Ikeda, Tsuyoshi Horikawa, Akira Toriumi(1.MIRAI Project, Association of Super-Advanced Electronics Technologies (ASET), 2.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 3.Department of Materials Science School of Engineering, University of Tokyo)
Koji Kita, Masashi Sasagawa, Kentaro Kyuno, Akira Toriumi(1.Department of Materials Science, Graduate School of Engineering, The University of Tokyo)
Robert Chau, Brian Doyle, Jack Kavalieros, Doug Barlage, Anand Murthy, Mark Doczy, Reza Arghavani, Suman Datta(1.Components Research, Logic Technology Development, Intel Corporation)
Mario M. Pelella(1.Logic Technology Development, Advanced Micro Devices)
H. Nakayama, H. Komatsu, S. Shimizu, T. Ohno, K. Takeshita(1.LSI Technology Development Division, Sony Corp.)
K. Sugihara, T. Nakahata, T. Matsumoto, S. Maeda, S. Maegawa, K. Ota, H. Sayama, H. Oda, T. Eimori, Y. Abe, T. Ozeki, Y. Inoue, T. Nishimura(1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.ULSI Development Center, Mitsubishi Electric Corporation)
Hee-Sung Kang, Chang-Bong Oh, Young-Wug Kim, Kyung-Soo Kim, Kwang-Pyuk Suh(1.Technology Development PJT, System LSI Division, Semiconductor Business, Samsung Electronics Co. Ltd.)
M. Motoyoshi, K. Moriyama, H. Mori, C. Fukumoto, H. Itoh, H. Kano, K. Bessho, H. Narisawa(1.Technology Development Group, SNC, Sony Corporation, 2.LSI Design Division, Sony Semiconductor Kyushu, 3.MOS Production Division, Sony Semiconductor Kyushu, 4.Group No. 2, Storage Technology Laboratories, Sony Corporation)
Keum Hwan Noh, Beelyong Yang, Seok Won Lee, Seaung-Suk Lee, Hee-Bok Kang, Young-Ji Park(1.New Device Team, Memory R&D Division, Hynix Semiconductor Inc.)
N. W. Jang, Y. J. Song, S. H. Joo, K. M. Lee, H. H. Kim, H. J. Joo, J. H. Park, S. W. Lee, S. Y. Lee, Kinam Kim(1.Advanced Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.)
Yoshimasa Horii, Jeffrey S. Cross, Naoyuki Sato, Soichiro Ozawa, Katsuyoshi Matsuura, Mitsushi Fujiki, Takeyasu Saito, Satoru Mihara, Takashi Eshita, Shan Sun, Fun Chu, Glen Fox, Rick Baily, Tom Davenport, Tatsuya Yamazaki(1.Fujitsu Limited, FRAM Development Department, 2.Fujitsu Laboratories Ltd., Inorganic material laboratories, 3.Ramtron International Corporations)
Yoshihito Kawashima, Takeshi Kijima, Hiroshi Ishiwara(1.Frontier Collaborative Research Center, Tokyo Institute of Technology, 2.R&D Association for Future Electron Devices)
Paul S. Weiss(1.Department of Chemistry, The Pennsylvania State University)
Takashi Shimada, Toshiya Okazaki, Yutaka Ohno, Kazutomo Suenaga, Shinya Iwatsuki, Shigeru Kishimoto, Takashi Mizutani, Risa Taniguchi, Takashi Inoue, Toshiki Sugai, Hisanori Shinohara(1.Department of Chemistry, Nagoya University, 2.Department of Quantum Engineering, Nagoya University, 3.National Institute of Advanced Industrial Science and Technology)
Kazuhiko Matsumoto, Seizo Kinoshita, Kousuke Kurachi, Yoshitaka Gotoh, Yuji Awano(1.Advanced Industrial Science & Technology, CREST, 2.Fujitsu Laboratory)
N. Aoki, J. Takayama, M. Kida, K. Horiuchi, S. Yamada, T. Ida, K. Ishibashi, Y. Ochiai(1.Department of Materials Technology & Center for Frontier Electronics and Photonics, Chiba University, 2.Corporate Research Center, Fuji-Xerox Co. Ltd., 3.School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 4.Semiconductor Laboratory, RIKEN)
Phan Ngoc Minh, Le T. T. Tuyen, Takahito Ono, H. Mimura, Masayoshi Esashi(1.Venture business laboratory, New Industry Creation Hatchery Center, Faculty of Engineering, Tohoku University, 2.Research Institute of Electrical Communication, Tohoku University, 3.Instituto of Materials Science, NCST)
J. S. Hwang, G. S. Lee, K. J. Kong, D. J. Ahn, S. W. Hwang, D. Ahn(1.Institute of Quantum Information Processing and Systems, University of Seoul, 2.Dept. of Chemical Engineering, Korea University, 3.Dept. of Electronics Engineering, Korea University)
A. Zrenner, E. Beham, S. Stufler, F. Findeis, M. Bichler, G. Abstreiter(1.Universitat Paderborn, 2.Walter Schottky Institut, Technische Universitat Munchen)
