2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
[B-1-2]Effects of Oxynitride-Based Interface Control on HfO2 MIS Properties and FET Performance
H. Ota, N. Yasuda, T. Yasuda, Y. Morita, N. Miyata, K. Tominaga M. Kadoshima, S. Migita, T. Nabatame, A. Toriumi(1.MIRAI Project, Advanced Semiconductor Research Center (ASRC), AIST, 2.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), National Institute of Advanced Industrial Science and Technology (AIST), 3.Department of Materials Science, School of Engineering, University of Tokyo)
