2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
[B-1-5]A Theoretical Study of SiO2-rich Zr and Hf Silicates as High-k Gate Insulators
Tomoyuki Hamada, Takuya Maruizumi, Yuuichi Matsui, Masahiko Hiratani(1.Advanced Research Laboratory, Hitachi Ltd., 2.Central Research Laboratory, Hitachi, Ltd.)
