2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
[C-2-2]Ultrathin Zr Silicate Gate Dielectrics with Compositional Gradation
Heiji Watanabe(1.Silicon Systems Research Laboratories, NEC Corporation)
