2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
[D-1-4]Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS
K. Sugihara, T. Nakahata, T. Matsumoto, S. Maeda, S. Maegawa, K. Ota, H. Sayama, H. Oda, T. Eimori, Y. Abe, T. Ozeki, Y. Inoue, T. Nishimura(1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.ULSI Development Center, Mitsubishi Electric Corporation)
