2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
[D-2-3]Highly Stable Etch Stopper Technology for 0.25 μm 1T1C 32Mb FRAM
N. W. Jang, Y. J. Song, S. H. Joo, K. M. Lee, H. H. Kim, H. J. Joo, J. H. Park, S. W. Lee, S. Y. Lee, Kinam Kim(1.Advanced Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.)
