2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
2002 International Conference on Solid State Devices and Materials
Sep 17 - Sep 19, 2002Nagoya Congress Center, Nagoya, Japan
[F-1-3]Single Electron Transistor with Ultra-High Coulomb Energy of 5000K using Position Controlled Grown Carbon Nanotube as Channel
Kazuhiko Matsumoto, Seizo Kinoshita, Kousuke Kurachi, Yoshitaka Gotoh, Yuji Awano(1.Advanced Industrial Science & Technology, CREST, 2.Fujitsu Laboratory)
