2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
[A-1-3]Suppression of Boron Penetration from S/D Extension to improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65nm node CMOS and beyond
T. Hayashi, T. Yamashita, K. Shiga, K. Hayashi, H. Oda, T. Eimori, M. Inuishi, Y. Ohji(1.Renesas Technology Corp., Wafer Process Engineering Development Dept.)
