2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
[A-2-2]Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+poly-Si/HfAlOx/SiO2 n-MOSFETs
N. Yasuda, H. Hisamatsu, H. Ota, A. Toriumi(1.MIRAI-ASET, 2.MIRAI-ASRC, 3.Department of Materials Science, The University of Tokyo)
