International Conference on Solid State Devices and Materials
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2004 International Conference on Solid State Devices and Materials
Sep 14
- Sep 17, 2004
Tower Hall Funabori, Tokyo, Japan
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2004 International Conference on Solid State Devices and Materials
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2004 International Conference on Solid State Devices and Materials
Sep 14
- Sep 17, 2004
Tower Hall Funabori, Tokyo, Japan
[A-2-4]
Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric
Rino Choi, Byoung Hun Lee, Chadwin D. Young, Jang Hoan Sim, Gennadi Bersuker(1.International SEMATECH, 2.IBM assignee)
https://doi.org/10.7567/SSDM.2004.A-2-4
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