2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan

[A-2-4]Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric

Rino Choi, Byoung Hun Lee, Chadwin D. Young, Jang Hoan Sim, Gennadi Bersuker(1.International SEMATECH, 2.IBM assignee)
https://doi.org/10.7567/SSDM.2004.A-2-4