2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
[A-8-4]In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) surfaces
H. Irie, K. Kita, K. Kyuno, A. Toriumi(1.Department of Materials Science, School of Engineering, The University of Tokyo)
