2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
[A-9-3]Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
Takamitsu Ishihara, Junji Koga, Shin-ichi Takagi(1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation, 2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)
