2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
[A-9-4]Determination of tunnel mass and thickness of gate oxide including poly-Si/SiO Si/SiO2 interfacial transition layers
Hiroshi Watanabe, Daisuke Matsushita, Kouichi Muraoka(1.Advanced LSI Technology Laboratory)
