2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
[B-1-2]Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
Ryosuke Iijima, Mariko Takayanagi, Takamitsu Ishihara, Takeshi Yamaguchi, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)
