2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
[B-1-3]Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric
Riichiro Mitsuhashi, Kazuyoshi Torii, Hiroshi Ohji, Takaaki Kawahara, Atsushi Horiuchi, Hitoshi Takada, Masashi Takahashi, Hiroshi Kitajima(1.Semiconductor Leading Edge Technologies)
