2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
[B-1-4]Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks
Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)
