2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan
International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

Sep 14 - Sep 17, 2004Tower Hall Funabori, Tokyo, Japan

[B-1-5]1.2nm HfSiON/SiON stacked gate insulators for 65nm-node MISFETs

Motofumi Saitoh, Nobuyuki Ikarashi, Heiji Watanabe, Shinji Fujieda, Hirohito Watanabe, Toshiyuki Iwamoto, Ayuka Morioka, Takashi Ogura, Masayuki Terai, Koji Watanabe, Makoto Miyamura, Toru Tatsumi, Taeko Ikarashi, Koji Masuzaki, Yukishige Saito, Yuko Yabe(1.System Devices Research Laboratories, NEC Corp.)
https://doi.org/10.7567/SSDM.2004.B-1-5