2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-1-2]The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT
M. Mizutani, T. Hayashi, M. Inoue, J. Yugami, K. Nomura, J. Tsuchimoto, Y. Ohno, M. Yoneda(1.Process Technology Development Div., RENESAS Technology Corp., 2.Wafer Process Engineering Dept.(1), RENESAS Semiconductor Engineering Corp.)
