You can search for presentations in this event.
Search
You can search for presentations in this event.
SearchSearch Results(533)
M. Niwa, R. Mitsuhashi, K. Yamamoto, S. Hayashi, Y. Harada, A. Rothchild, T. Hoffmann, S. Kubicek, S. De Gendt, M. Heyns, S. Biesemans, M. Kubota(1.Matsushita assignee at IMEC, 2.Semiconductor Company, Matsushita Electric Ind.,Co., Ltd., 3.IMEC vzw)
M. Mizutani, T. Hayashi, M. Inoue, J. Yugami, K. Nomura, J. Tsuchimoto, Y. Ohno, M. Yoneda(1.Process Technology Development Div., RENESAS Technology Corp., 2.Wafer Process Engineering Dept.(1), RENESAS Semiconductor Engineering Corp.)
Seiji Inumiya, Takayoshi Miura, Kiyoshi Shirai, Takeo Matsuki, Kazuyoshi Torii, Yasuo Nara(1.Semiconductor Leading Edge Technologies, Inc. (Selete), 2.Hitachi, Ltd., Central Research Laboratory)
Ryosuke Iijima, Mariko Takayanagi, Takeshi Yamaguchi, Masato Koyama, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)
Hiroyuki Ota, Arito Ogawa, Masaru Kadoshima, Kunihiko Iwamoto, Wataru Mizubayashi, Kenji Okada, Toshihide Nabatame, Hideki Satake, Akira Toriumi(1.MIRAI-ASRC, AIST, 2.MIRAI-ASET, AIST, 3.The University of Tokyo)
B. H. Lee, R. Choi, S.C. Song, J. Sim, C.D. Young, G. Bersuker, H.K. Park, H. Hwang(1.SEMATECH, 2.IBM assignee, 3.Gwangju Institute of Science and Technology)
Masahiro Koike, Tsunehiro Ino, Yuuichi Kamimuta, Yuichiro Mitani, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate Research&Development Center, Toshiba Corporation)
Izumi Hirano, Takeshi Yamaguchi, Yuichiro Mitani, Ryosuke Iijima, Katsuyuki Sekine, Mariko Takayanagi, Kazuhiro Eguchi, Noburu Fukushima(1.Advanced LSI Technology Laboratory, Corporate R&D Center, 2.Semiconductor Company, Toshiba Corporation)
Siddarth A. Krishnan, Manuel Quevedo, Rusty Harris, Paul D. Kirsch, Rino Choi, Byoung Hun Lee, Gennadi Bersuker, Jeff Peterson, Hong-Jyh Li, Chadwin Young, Jack C. Lee(1.SEMATECH, 2.TI, 3.AMD, 4.IBM and, 5.Infineon, 6.Professor, Electrical Engg. The University of Texas at Austin)
Yuuichi Kamimuta, Masato Koyama, Tsunehiro Ino, Katsuyuki Sekine, Motoyuki Sato, Kazuhiro Eguchi, Mariko Takayanagi, Mitsuhiro Tomita, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 3.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)
Motoyuki SATO, Tomonori AOYAMA, Katsuyuki SEKINE, Takeshi YAMAGUCHI, Izumi HIRANO, Kazuhiro EGUCHI, Yoshitaka TSUNASHIMA(1.Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation, 2.Research & Development Center, Toshiba Corporation)
Tsunehiro Ino, Yuuichi Kamimuta, Masamichi Suzuki, Masato Koyama, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation)
Kazuyuki Tomida, Koji Kita, Akira Toriumi(1.Department of Materials Engineering, School of Engineering, The University of Tokyo)
Chao Sung Lai, Woei Cherng Wu, Jer Chyi Wang, Tian Sheng Chao(1.Department of Electronic Engineering, Chang Gung University, 2.Department of Electronic Physics, National Chiao Tung University, 3.Nanya Technology Corporation)
Shigeaki Zaima, Akiyoshi Seko, Yukihiko Watanabe, Toshifumi Sago, Mitsuo Sakashita, Hiroki Kondo, Akira Sakai, Masaki Ogawa(1.Graduate School of Engineering, Nagoya University, 2.Toyota Central R＆D Labs., Inc., 3.Center for Cooperative Research in Advanced Science＆Technology, Nagoya University)
Rino Choi, B. H. Lee, H. K. Park, C.D. Young, J.H. Sim, S.C. Song, G. Bersuker(1.SEMATECH, 2.IBM assignee, 3.Gwanju Institute of Science and Technology)
Li Zhang, Yuichiro Mitani(1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)
Jer Chyi Wang, Woei Cherng Wu, Chao Sung Lai, Jam Wem Lee, Kuo Cheng Chiang, De Ching Shie, Tan Fu Lei, Chung Len Lee(1.Nanya Technology Corporation, 2.Department of Electronic Physics, National Chiao Tung University, 3.Department of Electronics Engineering, Chang Gung University, 4.National Nano Device Laboratories, 5.Department of Electronics Engineering, National Chiao Tung University)
Heiji Watanabe, Shiniti Yoshida, Yasumasa Watanabe, Takayoshi Shimura, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Kunio Nakamura, Keisaku Yamada(1.Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2.Semiconductor Leading Edge Technologies, Inc., 3.Nanotechnology Research Laboratories, Waseda University)
Akiyoshi Seko, Toshifumi Sago, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima(1.Graduate School of Engineering, Nagoya University, 2.Center for Cooperative Research in Advanced Science & Technology, Nagoya University)
Kenji OKADA, Hiroyuki OTA, Tsuyoshi HORIKAWA, Yasuyuki TAMURA, Takaoki SASAKI, Tomonori AOYAMA, Fumio OOTSUKA, Akira TORIUMI(1.MIRAI-ASET, AIST, 2.MIRAI-ASRC, AIST, 3.Department of Materials Science, The University of Tokyo, 4.Semiconductor Leading Edge Technologies (Selete))
N. Yasuda, H. Ota, T. Horikawa, T. Nabatame, H. Satake, A. Toriumi, Y. Tamura, T. Sasaki, F. Ootsuka(1.MIRAI-ASET, AIST, 2.MIRAI-ASRC, AIST, 3.University of Tokyo, 4.Selete, AIST)
Yoshiki Yamamoto, Koji Kita, Kentaro Kyuno, Akira Toriumi(1.Department of Materials Engineering, School of Engineering, The Univ. of Tokyo)
Koji Kita, Yi Zhao, Yoshiki Yamamot, Kentaro Kyuno, Akira Toriumi(1.Department of Materials Engineering, School of Engineering, The University of Tokyo)
Keiko Ariyoshi, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima(1.Graduate School of Engineering, Nagoya University, 2.Center for Cooperative Research in Advanced Science & Technology, Nagoya University)
G.N. Parsons, K.J. Park, D.B. Terry(1.Department of Chemical and Biomolecular Engineering North Carolina State University)
Yoshinori Tsuchiya, Masato Koyama, Junji Koga, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Toshiba Corp.)
Takeo Matsuki, Isamu Nishimura, Yasushi Akasaka, Kiyoshi Hayashi, Masataka Noguchi, Koji Yamashita, Kazuyoshi Torii, Naoki Kasai, Yasuo Nara(1.Research Department 1, Semiconductor Leading Edge Technologies, Inc., 2.Rohm, 3.Renesas, 4.NEC, 5.Sanyo, 6.Hitachi)
P. Zhao, J. Kim, M. J. Kim, B. E. Gnade, R. M. Wallace(1.Dept. of Electrical Engineering, University of Texas at Dallas, 2.School of Advanced Materials Eng., Kookmin University)
Reika Ichihara, Yoshinori Tsuchiya, Yuuichi Kamimuta, Masato Koyama, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Toshiba Corp.)
Hideaki Fujiwara, Masaru Kadoshima, Hiroyuki Ota, Hiroyuki Takaba, Nobuyuki Mise, Hideki Satake, Toshihide Nabatame, Akira Toriumi(1.MIRAI-ASET, AIST, 2.MIRAI-ASRC, AIST, 3.The Univ. of Tokyo)
Shinsuke Sakashita, Kenichi Mori, Kazuki Tanaka, Masaharu Mizutani, Masao Inoue, Shinichi Yamanari, Jiro Yugami, Hiroshi Miyatake, Masahiro Yoneda(1.Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation, 2.Process Engineering Section, Wafer Process Engineering Dept., Renesas Semiconductor Engineering Corporation)
Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Ryosuke Iijima, Masato Koyama, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)
Hideyuki Nomura, Koji Kita, Kentaro Kyuno, Akira Toriumi(1.Department of Materials Engineering, School of Engineering, The University of Tokyo)
T. Nakaoka, K. Shiraishi, Y. Akasaka, T. Chikyow, K. Yamada, Y. Nara(1.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba, 2.National Institute for Materials Science, 3.Semiconductor Leading Edge Technology Inc., 4.Nanotechnology Research Laboratories, Waseda University)
Minoru Ikeda, Georg Kresse, Toshihide Nabatame, Akira Toriumi(1.MIRAI, Association of Super-Advanced Electronics Technologies (ASET), 2.Institut fur Materialphysik, Univeisitat Wien, 3.MIRAI-AIST, 4.University of Tokyo)
F. Boeuf, S. Monfray, A. Pouydebasque, M. Muller, F. Payet, C. Ortolland, T. Skotnicki(1.STMicroelectronics, 2.Philips Semiconductor)
S. Miyake, T. Suzuki, T. Watanabe, O. Fujita, N. Harada, K. Doumeki, T. Fukai, T. Syo, T. Moriya, S. Haruta, Y. Takeshita, M. Ikeda, K. Imai(1.Advanced Device Development Division, 2.Product Engineering Division, 3.Process Technology Division and, 4.Custom LSI Division NEC Electronics Corporation)
A. Wei, T. Kammler, J. Hontschel, H. Bierstedt, J.-P. Biethan, A. Hellmich, K. Hempel, J. Klais, G. Koerner, M. Lenski, T. Mantei, A. Neu, R. Otterbach, C. Reichel, B. Trui, G. Burbach, T. Feudel, P. Javorka, C. Schwan, N. Kepler, H.-J. Engelmann, C. Ziemer-Popp, O. Herzog, D. Greenlaw, M. Raab, R. Stephan, M. Horstmann, P.-O. Hansson, A. Samoilov, E. Sanchez, O. Luckner, S. Weiher-Telford(1.AMD Saxony LLC & Co., 2.Applied Materials, Inc., 3.Buchenstr.)
C. Gallon, C. Fenouillet-Beranger, S. Denorme, F. Boeuf, V Fiori, N. Loubet, T. Kormann, M. Broekaart, P. Gouraud, F. Leverd, G. Imbert, C. Chaton, C. Laviron, L. Gabette, F. Vigilant, P. Garnier, H. Bernard, A. Tarnowka, A. Vandooren, R. Pantel, F. Pionnier, S. Jullian, S. Cristoloveanu, T. Skotnicki(1.STMicroelectronics, 2.Philips, 3.Freescale Semiconductors, 4.CEA-LETI, 5.IMEP)
Tsutomu Tezuka, Shu Nakaharai, Yoshihiko Moriyama, Norio Hirashita, Naoharu Sugiyama, Akihito Tanabe, Koji Usuda, Shin-ichi Takagi(1.MIRAI-ASET, 2.MIRAI-AIST, 3.The University of Tokyo)
Shinichi Takagi, Koji Takeda, Satoshi Sugahara, Toshinori Numata(1.Graduate School of Frontier Science, 2.School of Engineering, The Univ. of Tokyo, 3.MIRAI(ASET))
T. Miyashita, T. Tanaka(1.Fujitsu Laboratories Ltd.)
Takamitsu Ishihara, Ken Uchida, Junji Koga, Shin-ichi Takagi(1.Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation, 2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)
Yukio Nakabayashi, Junji Koga, Takamitsu Ishihara, Shin-ichi Takagi(1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation, 2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)
Yunik Son, Md.Shahriar Rahman, Kiju Im, Man Chang, Hokyong Park, Hyunsang Hwang(1.Department of Materials Science and Engineering, Gwangju Institute of Science and Technology)
Navab Singh, A. Agarwal, L. K. Bera, W.W. Fang, R. Kumar, G. Q. Lo, N. Balasubramanian, D. L. Kwong(1.Institute of Microelectronics, 2.National University of Singapore.)
Cheng Weitao, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi(1.Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University.)
Sinclair Chiang, M.F. Lu, Y.C. Liu, S. Huang-Lu, W.T. Shiau, S.C. Chien(1.Central Research and Development Division, UMC)
Tomohisa Mizuno, Shinichi Takagi(1.MIRAI-AIST, 2.Kanagawa University, 3.The University of Tokyo)
