2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-1-4]Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
Ryosuke Iijima, Mariko Takayanagi, Takeshi Yamaguchi, Masato Koyama, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)
