2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-1-5]Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs
Hiroyuki Ota, Arito Ogawa, Masaru Kadoshima, Kunihiko Iwamoto, Wataru Mizubayashi, Kenji Okada, Toshihide Nabatame, Hideki Satake, Akira Toriumi(1.MIRAI-ASRC, AIST, 2.MIRAI-ASET, AIST, 3.The University of Tokyo)
