2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-2-1]Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
B. H. Lee, R. Choi, S.C. Song, J. Sim, C.D. Young, G. Bersuker, H.K. Park, H. Hwang(1.SEMATECH, 2.IBM assignee, 3.Gwangju Institute of Science and Technology)
