2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-2-5]Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
Yuuichi Kamimuta, Masato Koyama, Tsunehiro Ino, Katsuyuki Sekine, Motoyuki Sato, Kazuhiro Eguchi, Mariko Takayanagi, Mitsuhiro Tomita, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 3.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)
