2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-2-6]Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
Motoyuki SATO, Tomonori AOYAMA, Katsuyuki SEKINE, Takeshi YAMAGUCHI, Izumi HIRANO, Kazuhiro EGUCHI, Yoshitaka TSUNASHIMA(1.Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation, 2.Research & Development Center, Toshiba Corporation)
