2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-5-1]Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
Heiji Watanabe, Shiniti Yoshida, Yasumasa Watanabe, Takayoshi Shimura, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Kunio Nakamura, Keisaku Yamada(1.Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2.Semiconductor Leading Edge Technologies, Inc., 3.Nanotechnology Research Laboratories, Waseda University)
