2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-7-2]Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
Yoshinori Tsuchiya, Masato Koyama, Junji Koga, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Toshiba Corp.)
