2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-8-1]MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS
P. Zhao, J. Kim, M. J. Kim, B. E. Gnade, R. M. Wallace(1.Dept. of Electrical Engineering, University of Texas at Dallas, 2.School of Advanced Materials Eng., Kookmin University)
