2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-8-3]Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlOx MOSFETs with Nanometer TaN Dots at the Top Interface
Hideaki Fujiwara, Masaru Kadoshima, Hiroyuki Ota, Hiroyuki Takaba, Nobuyuki Mise, Hideki Satake, Toshihide Nabatame, Akira Toriumi(1.MIRAI-ASET, AIST, 2.MIRAI-ASRC, AIST, 3.The Univ. of Tokyo)
