2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-8-4]Low temperature divided CVD technique for TiN metal gate electrodes of p-MISFETs
Shinsuke Sakashita, Kenichi Mori, Kazuki Tanaka, Masaharu Mizutani, Masao Inoue, Shinichi Yamanari, Jiro Yugami, Hiroshi Miyatake, Masahiro Yoneda(1.Process Development Dept., Process Technology Development Div., Production and Technology Unit, Renesas Technology Corporation, 2.Process Engineering Section, Wafer Process Engineering Dept., Renesas Semiconductor Engineering Corporation)
