2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[A-9-1]Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO2 Gate Dielectric
Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Ryosuke Iijima, Masato Koyama, Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)
