2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[B-1-5]Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs
Tsutomu Tezuka, Shu Nakaharai, Yoshihiko Moriyama, Norio Hirashita, Naoharu Sugiyama, Akihito Tanabe, Koji Usuda, Shin-ichi Takagi(1.MIRAI-ASET, 2.MIRAI-AIST, 3.The University of Tokyo)
