2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[B-2-3]Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
Takamitsu Ishihara, Ken Uchida, Junji Koga, Shin-ichi Takagi(1.Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation, 2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)
