2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan

[B-2-6L]Fully-depleted ultra narrow (-10 nm) body Gate-All-Around CMOS transistors

Navab Singh, A. Agarwal, L. K. Bera, W.W. Fang, R. Kumar, G. Q. Lo, N. Balasubramanian, D. L. Kwong(1.Institute of Microelectronics, 2.National University of Singapore.)
https://doi.org/10.7567/SSDM.2005.B-2-6L