2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
Sep 12 - Sep 15, 2005International Conference Center Kobe, Kobe, Japan
[B-3-3]Device Design of High-Speed Source-Heterojunction-MOS-Transistors (SHOT) under 10-nm Regime
Tomohisa Mizuno, Shinichi Takagi(1.MIRAI-AIST, 2.Kanagawa University, 3.The University of Tokyo)
