2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-1-3]Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction (SPIR) Method
N. Kitano, H. Arimura, S. Horie, T. Hosoi, T. Shimura, H. Watanabe, T. Kawahara, S. Sakashita, Y. Nishida, J. Yugami, T. Minami, M. Kosuda(1.Graduate School of Engineering, Osaka University, 2.Renesas Technology Corporation, 3.Canon ANELVA Corporation)
