2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-1-4]Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes
C. S. Park, S. C. Song, C. Burham, H. B. Park, H. Niimi, B. S. Ju, J. Barnett, C. Y. Kang, P. Lysaght, G. Bersuker, R. Choi, H. K. Park, H. Hwang, B. H. Park, S. Kim, P. Kirsch, B. H. Lee, R. Jammy(1.UT/Austin, 2.Samsung Assignee, 3.TI Assignee, 4.GIST, Korea, 5.Poongsan Microtec, 6.IBM Assignees)
