[A-3-3]Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs
Takashi Onizawa, Motoyuki Sato, Takayuki Aoyama, Takahisa Eimori, Yasuo Nara, Yuzuru Ohji(1.Semiconductor Leading Edge Technologies, Inc.)
