2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-3-4]nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2
C. Y. Kang, P. Kirsch, D. Heh, C. Young, P. Sivasubramani, G Bersuker, S.C. Song, R. Choi, B. H. Lee, J. Lichtenwalner, J. S. Jur, A. I. Kingon, R. Jammy(1.IBM Assignee, 2.Dept. of Materials Science and Engineering, North Carolina State University)
