2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-5-2]Electron Holography Characterization of Ultra-Shallow Junctions in 30-nm Gate-length MOS-FETs
Nobuyuki Ikarashi, Makiko Oshida, Makoto Miyamura, Motofumi Saitoh, Akira Mineji, Seiichi Shishiguchi(1.NEC Corporation, Device Platforms Research Laboratories, 2.NEC Electronics Corporation, Process Technology Division)
