2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-6-2]The origin of slow and fast trapping under Bias Temperature Instability in HfSiO MOSFET
Minseok Jo, Hokyung Park, Man Chang, Hyung-Suk Jung, Jong-Ho Lee, Hyunsang Hwang(1.Gwangju Institute of Science and Technology, 2.Advanced process Development Team, System LSI Division, Samsung Electronics Company, Ltd., Korea.)
