2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-8-2]Tinv Scaling and Jg Reducing for nMOSFET with HfSix/HfO2 Gate Stack by Interfacial Layer Formation Using Ozone Water Treatment Process
I. Oshiyama, K. Tai, T. Hirano, S. Yamaguchi, K. Tanaka, Y. Hagimoto, T. Uemura, T. Ando, K. Watanabe, R. Yamamoto, S. Kanda, J. Wang, Y. Tateshita, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, M. Oshima, S. Toyoda, N. Nagashima, S. Kadomura(1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 2.Graduate School of Engineering, University of Tokyo)
