2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2007 International Conference on Solid State Devices and Materials

2007 International Conference on Solid State Devices and Materials

Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-9-3]Impacts of Fluorine and Nitrogen Incorporation on NiSi Induced Junction Leakage on Si(110) Substrate

Masakatsu Tsuchiaki, Akira Nishiyama(1.Corporate Research & Development Center, Toshiba Corporation.)
https://doi.org/10.7567/SSDM.2007.A-9-3
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