2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-1-1]High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate
Keiji Ikeda, Noriyuki Taoka, Yoshimi Yamashita, Masatomi Harada, Kunihiro Suzuki, Toyoji Yamamoto, Naoharu Sugiyama, Shin-ichi Takagi(1.MIRAI-ASET, 2.MIRAI-ASRC, 3.The University of Tokyo)
