2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-1-3]Electrical Stress Effects on Mobility of Germanium-On-Insulator (GeOI) pMOSFETs with HfO2 Gate Dielectric
Jeong-Hyong Yi, Saeroonter Oh, H. -S. Philip Wong(1.Center for Integrated Systems and Dept. of Electrical Engineering, Stanford University)
