2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-1-5]Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-Germanium Channel P-MOSFETs
Grace Huiqi Wang, Eng-Huat Toh, Keat-Mun Hoe, S. Tripathy, S. Balakumar, Guo-Qiang Lo, Ganesh Samudra, Yee-Chia Yeo(1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore)
