2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2007 International Conference on Solid State Devices and Materials
Sep 18 - Sep 21, 2007Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[B-2-4]Schottky Barrier MOSFETs as Resonant Tunneling Devices
Shuichi Toriyama, Nobuyuki Sano(1.Advanced LSI Technology Laboratory, Toshiba Corporation, 2.Institute of Applied Physics, University of Tsukuba)
