2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
2009 International Conference on Solid State Devices and Materials
Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
[A-1-6]Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect Transistors
S. M. Koh1, C. M. Ng2, Z. Y. Zhao3, H. Maynard3, N. Variam3, T. Henry3, Y. Erokhin3, G. Samudra1, Y. C. Yeo1(1.National Univ. of Singapore(Singapore), 2.Chartered Semiconductor Manufacturing Ltd.(Singapore), 3.Varian Semiconductor(USA))
