2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
Back
International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[A-2-2]Temperature Coefficient of Threshold Voltage in Metal/High-k Gate Transistors with Various Thickness of TiN and Capping Layers

Y. Nishida1,2, K. Eikyu1, A. Shimizu1, T. Yamashita1, H. Oda1, Y. Inoue1, K. Shibahara2(1.Renesas Tech. Corp.(Japan), 2.Hiroshima Univ.(Japan))
https://doi.org/10.7567/SSDM.2009.A-2-2
Download PDFDownload PDF
Back