2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

Oct 6 - Oct 9, 2009Sendai Kokusai Hotel, Miyagi, Japan

[A-3-2]Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics

H. Oomae1, H. Itokawa2, I. Mizushima2, S. Nakamura3, N. Uchitomi1(1.Nagaoka Univ. of Tech.(Japan), 2.Toshiba Corp.(Japan), 3.Aoyama Gakuin Univ.(Japan))
https://doi.org/10.7567/SSDM.2009.A-3-2
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